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5 Wentworth Dr Hudson, New Hampshire 03051, US

GT Advanced Technologies

GTAT is a producer of high-quality crystal materials for applications as diverse as advanced semiconductors, high-energy lasers, and aerospace/defense windows. Silicon carbide (SiC) is produced in Hudson, New Hampshire. This advanced material is used in the production of semiconductors that have capabilities that far exceed those of basic silicon. As such, the material is favored for applications such as electric vehicles, which demand high power within small and cool packages. GTAT is a leader in the production of SiC, which it sells to partners within the semiconductor supply chain. The Company's focus is on expanding the supply of this challenging but beneficial material while driving costs lower. The other primary material made by GTAT is sapphire. Applications such as high-power lasers and aircraft windows use sapphire to improve optical performance. Attributes setting GTAT apart are its ability to make exceptionally pure sapphire, and also in very large sizes.

GT Advanced Technologies logo

GT Advanced Technologies

GTAT is a producer of high-quality crystal materials for applications as diverse as advanced semiconductors, high-energy lasers, and aerospace/defense windows. Silicon carbide (SiC) is produced in Hudson, New Hampshire. This advanced material is used in the production of semiconductors that have capabilities that far exceed those of basic silicon. As such, the material is favored for applications such as electric vehicles, which demand high power within small and cool packages. GTAT is a leader in the production of SiC, which it sells to partners within the semiconductor supply chain. The Company's focus is on expanding the supply of this challenging but beneficial material while driving costs lower. The other primary material made by GTAT is sapphire. Applications such as high-power lasers and aircraft windows use sapphire to improve optical performance. Attributes setting GTAT apart are its ability to make exceptionally pure sapphire, and also in very large sizes.

onsemi.com

5 Wentworth Dr Hudson, New Hampshire 03051, US

Details

Year founded

1994

Revenue

10M-25M

Employees

51-200

Number of locations

5

NAICS

3344

SIC

3674

Products & Services

Outlines the company's specialized services and operational strengths.

  • Balls
  • Blanks
  • Crystals
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Equipment

Provides a detailed list of machinery and tools utilized on the company's premises.

  • Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L
  • Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 60 mohm, 900 V, M2, TO247−3L
  • Silicon Carbide (SiC) MOSFET, N‐Channel- EliteSiC, 20 mohm, 900 V, M2, TO247−3L
  • Contact us in order to access

Ramping up production

Indicates the company's current production trend and growth trajectory.

FALSE

Our production algorithm is showing that gt advanced technologies is not ramping up production.

Target industries

Semiconductor
Aerospace

Employees working in GT Advanced Technologies

Ron Reli

Cro

Gogon Setiawan

Chief executive officer

Bob Woodbury

Chief financial officer

Jonko Klappen

Chief executive officer

Umit Amir

Acting chief executive officer

Employees working in GT Advanced Technologies

Ron Reli

Cro

Gogon Setiawan

Chief executive officer

Bob Woodbury

Chief financial officer

Jonko Klappen

Chief executive officer

Umit Amir

Acting chief executive officer

Tom Zarrella

Chief executive officer

Tre Poiu

Chief executive

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Locations (5)

HQ

GT Advanced Technologies

5 Wentworth Dr Hudson, New Hampshire 03051, US

GT Advanced Technologies

27 Congress Street Salem, MA 01970, US

GT Advanced Technologies

101 East Front Suite 401 Missoula, MT 59802, US

GT Advanced Technologies

3201-3203 Park Place 1601 Nanjung Road West Jing An District, Shanghai 200040, CN

GT Advanced Technologies

6F-10 No. 38 Taiyuan St. Jhubei City, Hsinchu County 30265, TW

Frequently Asked Questions


GT Advanced Technologies offers a range of services and capabilities, including Balls.


Get the full services & capabilities list of GT Advanced Technologies

GT Advanced Technologies uses a variety of equipment, including Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L.


Get the full equipment list of GT Advanced Technologies

GT Advanced Technologies serves several industries, including the semiconductor industry.


Get the full target industries list of GT Advanced Technologies

GT Advanced Technologies operates from 5 locations.


Get a free locations and target markets review for GT Advanced Technologies

The headquarters of GT Advanced Technologies are located in 5 wentworth drive, hudson, new hampshire 03051, united states.


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The NAICS code for GT Advanced Technologies is 3344.


Get a free business data review for GT Advanced Technologies

GT Advanced Technologies has 195 employees.


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The official website of GT Advanced Technologies is https://www.onsemi.com.


GT Advanced Technologies was founded in 1994.